GROUND STATE HYDROGEN RADICAL SOURCES FOR CHEMICAL VAPOR DEPOSITION OF SILICON-CARBON-CONTAINING FILMS

摘要

A thin layer of a silicon-carbon-containing film is deposited on a substrate by generating hydrogen radicals from hydrogen gas supplied to a radicals generation chamber, supplying the hydrogen radicals to a substrate processing chamber separate from the substrate processing chamber via a multiport gas distributor, and reacting the hydrogen radicals therein with an organosilicon reactant introduced into the substrate processing chamber concurrently. The hydrogen radicals are allowed to relax into a ground state in a radicals relaxation zone within the substrate processing chamber before reacting with the organosilicon reactant.

主权项

1. A method for depositing a silicon-carbon-containing film on a substrate, the method comprising:
supporting a substrate in a substrate processing chamber thereby exposing a major surface of the substrate to an interior of the substrate processing chamber; introducing a flow of hydrogen (H2) gas into a radicals generation chamber that is separate from the substrate processing chamber and fluidly coupled therewith via a multiport gas distributor, the multiport gas distributor having a grouping of mutually spaced apart gas ports directed into the substrate processing chamber to establish a flow path out of the radicals generation chamber, through the multiport gas distributor, and into a radicals relaxation zone contained entirely within the interior of the substrate processing chamber; exciting at least a portion of the hydrogen (H2) gas within the radicals generation chamber to form excited hydrogen radicals in the flow of the hydrogen (H2) gas so that at least some of the excited hydrogen radicals flow along the flow path through the multiport gas distributor and into the radicals relaxation zone, within which substantially all of the excited hydrogen radicals flowing into the radicals relaxation zone transition into relaxed hydrogen radicals; and introducing a flow of an organosilicon reactant into a chemical vapor deposition zone which is formed within the interior of the substrate processing chamber between the radicals relaxation zone and the major surface of the substrate, at least some of the relaxed hydrogen radicals flowing from the radicals relaxation zone into the chemical vapor deposition zone concurrent with the flow of the organosilicon reactant and reacting therein with some of the organosilicon reactant, thereby depositing a silicon-carbon-containing film on the major surface of the substrate.