| 发明名称 |
Gate Device Over Strained Fin Structure |
| 摘要 |
A method for forming a semiconductor device includes forming a fin structure on a substrate, forming a shallow trench isolation region adjacent the fin structure so that an upper portion of the fin structure is exposed, forming a dummy gate over the exposed fin structure, forming an interlayer dielectric layer around the dummy gate, removing the dummy gate to expose the fin structure, and after removing the dummy gate, introducing a strain into a crystalline structure of the exposed fin structure. |
| 申请公布号 |
US2015115334(A1) |
申请公布日期 |
2015.04.30 |
| 申请号 |
US201314062993 |
申请日期 |
2013.10.25 |
| 申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Liaw Jhon Jhy |
| 分类号 |
H01L29/78;H01L21/762;H01L21/321;H01L29/66 |
主分类号 |
H01L29/78 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for forming a semiconductor device, the method comprising:
forming a fin structure on a substrate; forming a shallow trench isolation region adjacent the fin structure so that an upper portion of the fin structure is exposed; forming a dummy gate over the exposed fin structure; forming an interlayer dielectric layer around the dummy gate; removing the dummy gate to expose the fin structure; and after removing the dummy gate, introducing a strain into a crystalline structure of the exposed fin structure. |
| 地址 |
Hisn-Chu TW |
