SEMICONDUCTOR DEVICE

摘要

A semiconductor device includes: a drift layer having a first conduction type; a base layer having a second conduction type and formed on the drift layer; an emitter layer having the first conduction type and formed in a surface layer portion of the base layer; a buffer layer having the first conduction type and formed in the drift layer separated from the base layer; a collector layer having the second conduction type and formed selectively in the buffer layer; a gate insulation film in contact with a channel region of the base layer between the drift layer and the emitter layer; a gate electrode formed on the gate insulation film; a first electrode electrically connected to the base layer and the emitter layer; and a second electrode electrically connected to the buffer layer and the collector layer. The buffer layer has a carrier density smaller than a space charge density.

主权项

1. A semiconductor device comprising:
a drift layer having a first conduction type; a base layer having a second conduction type and formed in a surface layer portion of the drift layer; an emitter layer having the first conduction type and formed in a surface layer portion of the base layer; a buffer layer having the first conduction type and formed at a position of the drift layer separated from the base layer; a collector layer having the second conduction type and formed selectively in the buffer layer; a gate insulation film in contact with a channel region that is a portion of the base layer sandwiched between the drift layer and the emitter layer; a gate electrode formed on the gate insulation film; a first electrode electrically connected to the base layer and the emitter layer; and a second electrode electrically connected to the buffer layer and the collector layer, wherein the buffer layer has a carrier density smaller than a space charge density.