| 发明名称 |
SCANNING ELECTRON MICROSCOPE SYSTEM CAPABLE OF MEASURING IN-CELL OVERLAY OFFSET USING HIGH-ENERGY ELECTRON BEAM AND METHOD THEREOF |
| 摘要 |
A method of measuring an overlay offset using a scanning electron microscope system includes: scanning an in-cell region, which includes a lower structure and an upper structure stacked in a sample, using a primary electron beam with a landing energy of at least 10 kV; detecting electrons emitted from the scanned in-cell region; and measuring an overlay offset with respect to overlapping patterns included in the in-cell region using an image of the in-cell region that is generated based on the detected electrons emitted from the scanned in-cell region. |
| 申请公布号 |
US2015115154(A1) |
申请公布日期 |
2015.04.30 |
| 申请号 |
US201414464325 |
申请日期 |
2014.08.20 |
| 申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
Kim Min Kook;Ko Woo Seok;Yang Yu Sin;Lee Sang Kil;Jun Chung Sam |
| 分类号 |
H01J37/28;G01B15/00;H01J37/22 |
主分类号 |
H01J37/28 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of measuring an overlay offset using a scanning electron microscope (SEM) system, the method comprising:
scanning an in-cell region, which includes a lower structure and an upper structure stacked in a sample, using a primary electron beam with a landing energy of at least 10 kV; detecting electrons emitted from the scanned in-cell region; and measuring an overlay offset with respect to overlapping patterns included in the in-cell region using an image of the in-cell region that is generated based on the detected electrons emitted from the scanned in-cell region. |
| 地址 |
Suwon-si KR |
