| 摘要 |
Provided is a photoelectric conversion device which is capable of improving element characteristics by suppressing increase of the contact resistance between an amorphous semiconductor layer containing an impurity and an electrode formed on the amorphous silicon layer. A photoelectric conversion element (10) is provided with a silicon substrate (12), a first amorphous semiconductor layer (20n), a second amorphous semiconductor layer (20p), a first electrode (22n) and a second electrode (22p). One electrode (22n) comprises a first conductive layer (26n, 26p) and a second conductive layer (28n, 28p). The first conductive layer (26n, 26p) is mainly composed of a first metal. The second conductive layer (28n, 28p) contains a second metal that is more susceptible to oxidation than the first metal, and is formed in contact with the first conductive layer (26n, 26p) such that the second conductive layer (28n, 28p) is closer to the silicon substrate (12) than the first conductive layer (26n, 26p). |
