| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device with a novel structure, having good characteristics.SOLUTION: A semiconductor device has: an oxide semiconductor layer; a source electrode and a drain electrode electrically connected with the oxide semiconductor layer; a gate insulating layer covering the oxide semiconductor layer, the source electrode and the drain electrode; and a gate electrode provided on the gate insulating layer. The source electrode and the drain electrode have oxidation regions whose lateral faces are oxidized. In addition, it is preferred that the oxidation regions of the source electrode and the drain electrode are formed by plasma processing using a high-frequency power of 300 MHz or more and 300 GHz or less and a mixed gas of oxygen and argon. |
