SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide an SGT (Surrounding Gate Transistor) having a structure to form a transistor depending on a work function difference between a metal and a semiconductor.SOLUTION: A semiconductor device comprises: a columnar semiconductor with an impurity concentration of 10cmor less; a first insulator which surrounds the columnar semiconductor; a first metal which surrounds the first insulator on one end of the columnar semiconductor; a second metal which surrounds the first insulator on the other end of the columnar semiconductor; a third metal which surrounds the first insulator in a region sandwiched by the first metal and the second metal; a second insulator formed between the first metal and the third metal; a third insulator formed between the second metal and the third metal; a fourth metal which connects the first metal and the one end of the columnar semiconductor; and a fifth metal which connects the second metal and the other end of the columnar semiconductor, in which a work function of the third metal is between a range from 4.2 eV to 5.0 eV.