| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for depositing silicon carbide coating on a substrate so that the obtained coating has a carrier lifetime of 0.5-1,000 μSec.SOLUTION: A method for depositing silicon carbide coating on a substrate includes a step (a) for introducing a mixed gas containing a chlorosilane gas selected from a dichlorosilane gas, a methylhydrogendichlorosilane gas, a dimethyldichlorosilane gas, and a mixture thereof, a gas containing carbon, and a hydrogen gas into a reaction chamber containing a single crystal silicon carbide substrate; and a step (b) for heating the substrate at 1,200-1,800°C. The pressure in the reaction chamber is kept in the range of 10-250 torr. |
