| 摘要 |
PROBLEM TO BE SOLVED: To prevent adverse effects on electrical characteristics of a circuit element due to diffusion of copper in a semiconductor device which uses copper plating for an antenna and in which an integrated circuit and the antenna are integrally formed; and prevent defects of a semiconductor device associated with poor connection between an antenna and an integrate circuit in a semiconductor device in which the integrate circuit and the antenna are integrally formed.SOLUTION: In a semiconductor device in which an integrate circuit 100 and an antenna 101 are integrally formed on the same substrate 102, when a copper plating layer 108 is used as a conductor of the antenna 101, a nitride film of titanium, tantalum, tungsten or molybdenum is used as a first ground layer 107a, and a nickel nitride film is used as a second base layer 107b ground layer to prevent diffusion of copper to the circuit element and adverse effects on electronic characteristics of the circuit element. And by using a nickel nitride film as the second base layer 107b, poor connection between the antenna and the integrate circuit is reduced. |
