| 发明名称 |
MULTI-BIT FERROELECTRIC MEMORY DEVICE AND METHODS OF FORMING THE SAME |
| 摘要 |
Multi-bit ferroelectric memory devices and methods of forming the same are provided. One example method of forming a multi-bit ferroelectric memory device can include forming a first ferroelectric material on a first side of a via, removing a material to expose a second side of the via, and forming second ferroelectric material on the second side of the via at a different thickness compared to the first side of the via. |
| 申请公布号 |
US2015117084(A1) |
申请公布日期 |
2015.04.30 |
| 申请号 |
US201314068887 |
申请日期 |
2013.10.31 |
| 申请人 |
Micron Technology, Inc. |
发明人 |
Karda Kamal M.;Gealy F. Daniel;Ramaswamy D.V. Nirmal;Mouli Chandra V. |
| 分类号 |
H01L43/02;H01L43/12;H01L21/28;G11C11/22 |
主分类号 |
H01L43/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for forming a memory device, comprising:
forming a first ferroelectric material on a first side of a via; removing a material to expose a second side of the via; and forming a second ferroelectric material on the second side of the via at a different thickness compared to the first side of the via. |
| 地址 |
Boise ID US |
