SOLID-STATE IMAGING DEVICE AND ELECTRONIC INSTRUMENT

摘要

Disclosed herein is a solid-state imaging device including, a first semiconductor region of the first conduction type, a photoelectric conversion part having a second semiconductor region of the second conduction type formed in the region separated by the isolation dielectric region of the first semiconductor region, pixel transistors formed in the first semiconductor region, a floating diffusion region of the second conduction type which is formed in the region separated by the isolation dielectric region of the first semiconductor region, and an electrode formed on the first semiconductor region existing between the floating diffusion region and the isolation dielectric region and is given a prescribed bias voltage.

主权项

1. A solid-state imaging device comprising:
a first semiconductor region of the first conduction type; a photoelectric conversion part configured to have a second semiconductor region of the second conduction type formed in the region separated by an isolation dielectric region of the first semiconductor region; pixel transistors configured to be formed in the first semiconductor region; a floating diffusion region of the second conduction type configured to be formed in the region separated by the isolation dielectric region of the first semiconductor region; and a depletion region configured to be formed between the first semiconductor region and the floating diffusion region.