SIC BIPOLAR JUNCTION TRANSISTOR WITH REDUCED CARRIER LIFETIME IN COLLECTOR AND A DEFECT TERMINATION LAYER

摘要

A method of manufacturing a silicon carbide (SiC) bipolar junction transistor (BJT) and a SiC BJT (100) are provided. The SiC BJT comprises an emitter region (150), a base region (140) and a collector region (120). The collector region is arranged on a substrate (110) having an off-axis orientation of about 8 degrees or lower. A defect termination layer (DTL, 130) for terminating dislocations originating from the substrate is arranged between the substrate and the collector region. The collector region includes a zone (125) in which the life time of the minority charge carriers is shorter than in the base region. The present invention is advantageous in terms of improved stability of the SiC BJTs.

主权项

1. A silicon carbide, SiC, bipolar junction transistor, BJT, comprising:
an emitter region, a base region, and a collector region, the collector region being arranged on a substrate having an off-axis orientation of 8 degrees or lower; and a defect termination layer, DTL, for terminating dislocations originating from the substrate, the DTL being arranged between the substrate and the collector region, the collector region including a zone in which the lifetime of the minority charge carriers have lifetimes shorter than in the base region such that the zone is configured to prevent access of minority charge carriers to the DTL.