发明名称 METHODS OF GROWING NITRIDE SEMICONDUCTORS AND METHODS OF MANUFACTURING NITRIDE SEMICONDUCTOR SUBSTRATES
摘要 Methods of growing nitride semiconductor layers including forming nitride semiconductor dots on a substrate and growing a nitride semiconductor layer on the nitride semiconductor dots. The nitride semiconductor layer may be separated from the substrate to be used as a nitride semiconductor substrate.
申请公布号 US2015115280(A1) 申请公布日期 2015.04.30
申请号 US201514590548 申请日期 2015.01.06
申请人 Samsung Electronics Co., Ltd. 发明人 PARK Sung-soo;LEE Moon-sang
分类号 H01L33/32;H01L33/24;H01L33/12 主分类号 H01L33/32
代理机构 代理人
主权项
地址 Suwon-Si KR