发明名称 |
METHODS OF GROWING NITRIDE SEMICONDUCTORS AND METHODS OF MANUFACTURING NITRIDE SEMICONDUCTOR SUBSTRATES |
摘要 |
Methods of growing nitride semiconductor layers including forming nitride semiconductor dots on a substrate and growing a nitride semiconductor layer on the nitride semiconductor dots. The nitride semiconductor layer may be separated from the substrate to be used as a nitride semiconductor substrate. |
申请公布号 |
US2015115280(A1) |
申请公布日期 |
2015.04.30 |
申请号 |
US201514590548 |
申请日期 |
2015.01.06 |
申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
PARK Sung-soo;LEE Moon-sang |
分类号 |
H01L33/32;H01L33/24;H01L33/12 |
主分类号 |
H01L33/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Suwon-Si KR |