METHOD OF FABRICATING SEMICONDUCTOR DEVICE

摘要

A method of fabricating a semiconductor device is disclosed. Provided is a substrate having a dummy gate formed thereon, a spacer on a sidewall of the dummy gate and a first dielectric layer surrounding the spacer. The dummy gate is removed to form a gate trench. A gate dielectric layer and at least one work function layer is formed in the gate trench. The work function layer and the gate dielectric layer are pulled down, and a portion of the spacer is laterally removed at the same time to widen a top portion of the gate trench. A low-resistivity metal layer is formed in a bottom portion of the gate trench. A hard mask layer is formed in the widened top portion of the gate trench.

主权项

1. A method of fabricating a semiconductor device, comprising:
providing a substrate having a dummy gate formed thereon, a spacer on a sidewall of the dummy gate and a first dielectric layer surrounding the spacer, removing the dummy gate to form a gate trench; forming a gate dielectric layer and at least one work function layer in the gate trench; pulling down the work function layer and the gate dielectric layer, and laterally removing a portion of the spacer at the same time to widen a top portion of the gate trench; forming a low-resistivity metal layer in a bottom portion of the gate trench; and forming a hard mask layer in the widened top portion of the gate trench.