METHOD OF MAKING STRUCTURE HAVING A GATE STACK

摘要

A method includes removing a first portion of a gate layer of a first transistor and leaving a second portion of the gate layer. The first transistor includes a drain region, a source region, and a gate stack, and the gate stack includes a gate dielectric layer, a gate conductive layer over the gate dielectric layer, and the gate layer directly on the gate conductive layer. The method includes removing a gate layer of a second transistor and forming a conductive region at a region previously occupied by the first portion of the gate layer of the first transistor, the unit resistance of the conductive region being less than that of the gate layer of the first transistor.

主权项

1. A method comprising:
removing a first portion of a gate layer of a first transistor and leaving a second portion of the gate layer of the first transistor, the first transistor comprising a drain region, a source region, and a gate stack, the gate stack comprising a gate dielectric layer, a gate conductive layer over the gate dielectric layer, and the gate layer directly over the gate conductive layer; removing a gate layer of a second transistor; and forming a conductive region of the first transistor at a region previously occupied by the first portion of the gate layer of the first transistor, the conductive region of the first transistor having a unit resistance less than that of the gate layer of the first transistor.