发明名称 |
METHOD OF MANUFACTURING SOI WAFER |
摘要 |
The present invention provides a method of manufacturing an SOI wafer, comprising, before forming an oxide film, heat treating a prepared silicon wafer at a temperature ranging from 1100°C to 1250°C under an oxidizing atmosphere for 30 minutes to 120 minutes and polishing a surface of the silicon wafer subjected to the heat treatment, which will become a bonding interface. The method can sufficiently dissolve defects in a bond wafer in SOI-wafer manufacture and manufacture an SOI wafer with few faults such as defects. The method also can repeatedly reuse a separated wafer, which is produced as a by-product in the ion implantation separation method, as the bond wafer. |
申请公布号 |
SG11201501678U(A) |
申请公布日期 |
2015.04.29 |
申请号 |
SG11201501678U |
申请日期 |
2013.09.12 |
申请人 |
SHIN-ETSU HANDOTAI CO.,LTD. |
发明人 |
QU, WEI FENG;TAHARA, FUMIO;OOI, YUUKI |
分类号 |
H01L21/02;C30B29/06;C30B31/22;C30B33/02;H01L21/265;H01L21/324;H01L27/12 |
主分类号 |
H01L21/02 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|