发明名称 |
SEMICONDUCTOR STRUCTURE COMPRISING AN ABSORBING AREA PLACED IN A FOCUSING CAVITY |
摘要 |
<p>A semiconducting structure configured to receive electromagnetic radiation, a method for manufacturing such a structure, and a semiconductor component, the semiconductor structure including: a first semiconducting area of a first type of conductivity, a second semiconducting area of a second type of conductivity opposite to the first type of conductivity, the second area being in contact with the first area to form a semiconducting junction. The second area includes a portion for which a concentration of majority carriers is at least ten times less than a concentration of majority carriers of the first area. The second area and its portion are essentially made in a first cavity configured to focus in the first cavity at least one portion of the electromagnetic radiation.</p> |
申请公布号 |
EP2865017(A1) |
申请公布日期 |
2015.04.29 |
申请号 |
EP20130729748 |
申请日期 |
2013.06.19 |
申请人 |
COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIESALTERNATIVES |
发明人 |
BOULARD, FRANÇOIS;ESPIAU DE LAMAESTRE, ROCH;FOWLER, DAVID;GRAVRAND, OLIVIER;ROTHMAN, JOHAN |
分类号 |
H01L31/109;H01L31/0232;H01L31/103 |
主分类号 |
H01L31/109 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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