发明名称 SEMICONDUCTOR STRUCTURE COMPRISING AN ABSORBING AREA PLACED IN A FOCUSING CAVITY
摘要 <p>A semiconducting structure configured to receive electromagnetic radiation, a method for manufacturing such a structure, and a semiconductor component, the semiconductor structure including: a first semiconducting area of a first type of conductivity, a second semiconducting area of a second type of conductivity opposite to the first type of conductivity, the second area being in contact with the first area to form a semiconducting junction. The second area includes a portion for which a concentration of majority carriers is at least ten times less than a concentration of majority carriers of the first area. The second area and its portion are essentially made in a first cavity configured to focus in the first cavity at least one portion of the electromagnetic radiation.</p>
申请公布号 EP2865017(A1) 申请公布日期 2015.04.29
申请号 EP20130729748 申请日期 2013.06.19
申请人 COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIESALTERNATIVES 发明人 BOULARD, FRANÇOIS;ESPIAU DE LAMAESTRE, ROCH;FOWLER, DAVID;GRAVRAND, OLIVIER;ROTHMAN, JOHAN
分类号 H01L31/109;H01L31/0232;H01L31/103 主分类号 H01L31/109
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