发明名称 |
TWO-LIGHT FLUX INTERFERENCE EXPOSURE DEVICE, TWO-LIGHT FLUX INTERFERENCE EXPOSURE METHOD, SEMICONDUCTOR LIGHT EMITTING ELEMENT MANUFACTURING METHOD, AND SEMICONDUCTOR LIGHT EMITTING ELEMENT |
摘要 |
<p>It is possible to realize a 2-light flux interference device capable of generating a significantly uniform laser beam having a high coherence by using a double higher harmonic of Ar laser or a quadruple higher harmonic of Nd dope YAG laser as a light source, an etalon, and a half-wavelength plate. Moreover, by the 2-light flux interference exposure, a photo resist mask is subjected to exposure of cyclic pattern. The photo resist mask is developed. By using the resist pattern as a mask, a semiconductor layer etching mask pattern is formed. After the resist is removed, the light extraction surface is etched. Thus, it is possible to manufacture a semiconductor light emitting element having a high energy conversion efficiency at a significantly low cost.</p> |
申请公布号 |
EP1855311(B1) |
申请公布日期 |
2015.04.29 |
申请号 |
EP20060714428 |
申请日期 |
2006.02.23 |
申请人 |
MEIJO UNIVERSITY |
发明人 |
KAMIYAMA, SATOSHI;IWAYA, MOTOAKI;AMANO, HIROSHI;AKASAKI, ISAMU |
分类号 |
H01L21/027;G02F1/37;G03F7/20;H01L33/00;H01L33/22;H01S3/00 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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