| 摘要 |
<p>Provided is a method for controlling a plasma processing apparatus which maintains low pollution and high uniformity in multi-stage etching, and does not need an advance resonance point investigation. The method for controlling the plasma processing apparatus has a process of adjusting high frequency bias current which flows into an opposed antenna electrode. More specifically, the method comprises the processes of: setting reactance of a variable element to an initial value (S2); scanning bias current which flows into the opposed antenna electrode (S4); searching a maximum value of scanned current (S5, S6); and moving the reactance value of the variable element from the maximum value to the predetermined value, and fixing the same.</p> |
