| 摘要 |
<p>Disclosed is a method of using a variable-size flash transition layer in a non-volatile memory. The method starts when the non-volatile memory receives a read request to read data corresponding to a logical block address of the non-volatile memory. Next, a particular entry of a map, associated with the logical block address, is read, to obtain (i) a physical address of a particular page of the non-volatile memory, (ii) an offset in the particular page to stored compressed data and (iii) a length of the compressed data. Then the memory converts the offset and the length to (i) an address of a given read unit in the particular page and (ii) a number of the read units to be read. Finally, the data is read from the particular page starting from the given read unit to at most the number of the read units given to be read in (ii). The offset and length granularity are finer than one read unit.</p> |
