发明名称 |
Power overlay structure and method of making same |
摘要 |
A semiconductor device module (113) includes a dielectric layer (48), a semiconductor device (44) having a first surface (39) coupled to the dielectric layer (48), and a conducting shim (45) having a first surface (41) coupled to the dielectric layer (48). The semiconductor device (44) also includes an electrically conductive heatspreader (60) having a first surface coupled to a second surface (47) of the semiconductor device (44) and a second surface (49) of the conducting shim (45). A metallization layer (54) is coupled to the first surface (39) of the semiconductor device (44) and the first surface (41) of the conducting shim (45). The metallization layer (47) extends through the dielectric layer (48) and is electrically connected to the second surface (47) of the semiconductor device (44) by way of the conducting shim (45) and the heatspreader (60). |
申请公布号 |
EP2779231(A3) |
申请公布日期 |
2015.04.29 |
申请号 |
EP20140159901 |
申请日期 |
2014.03.14 |
申请人 |
GENERAL ELECTRIC COMPANY |
发明人 |
GOWDA, ARUN VIRUPAKSHA;CHAUHAN, SHAKTI SINGH;MCCONNELEE, PAUL ALAN |
分类号 |
H01L23/433;H01L23/00;H01L23/495;H01L23/538 |
主分类号 |
H01L23/433 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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