| 摘要 |
<p>According to an embodiment, a photodetector includes a scintillator layer (18), a photodetection layer (12), an antireflective member (20), and an intermediate layer (25). The scintillator layer (18) is configured to convert radiation into light. The photodetection layer has a first surface facing the scintillator layer. The photodetection layer includes a pixel region (16) including multiple photodetection devices (14) configured to detect light, and a peripheral region (17) that surrounds the pixel region. The pixel and peripheral regions are provided on the first surface. The antireflective member is provided between the scintillator layer and the photodetection layer and opposed to at least part of the peripheral region. The antireflective member is configured to prevent reflection of at least part of light in a sensitive wavelength range of the photodetection devices. The intermediate layer is provided in a region other than the antireflective member between the scintillator and photodetection layers.</p> |
