发明名称 METHOD OF MANUFACTURING A MASK BLANK AND METHOD OF MANUFACTURING A TRANSFER MASK
摘要 <p>PROBLEM TO BE SOLVED: To provide a method for producing a mask blank having reduced foreign matter defects and excellent in quality.SOLUTION: Provided is a method for producing a mask blank in which a thin film is formed using a sputtering device provided with a vacuum chamber in which a chamber to be arranged with a target and a chamber to be arranged with a substrate are connected with openings provided at the inner walls of both the chambers. In the production method, a rare gas is introduced into the chamber on the target side, and a reactive gas is introduced into the chamber on the substrate side. The exhaust at the inside of the chamber is performed with an exhaust means provided at the chamber on the substrate side. By performing reactive sputtering in this environment, sputtering particles flied from the target by rare gas components made into charged particles in the chamber at the target side are reacted with a reactive gas at the inside of the chamber on the substrate side, and deposit the product on the substrate.</p>
申请公布号 SG10201406128X(A) 申请公布日期 2015.04.29
申请号 SGX10201406128 申请日期 2014.09.26
申请人 HOYA CORPORATION;HOYA ELECTRONICS SINGAPORE PTE. LTD. 发明人 TEIICHIRO UMEZAWA
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