发明名称 CHEMICAL VAPOR DEPOSITION METHOD
摘要 A chemical vapor deposition (CVD) method for depositing a thin film on a surface of a substrate is described. The CVD method comprises disposing a substrate on a substrate holder in a process chamber, and introducing a process gas to the process chamber, wherein the process gas comprises a chemical precursor. The process gas is exposed to a non-ionizing heat source separate from the substrate holder to cause decomposition of the chemical precursor. A thin film is deposited upon the substrate.
申请公布号 EP2412011(A4) 申请公布日期 2015.04.29
申请号 EP20100756743 申请日期 2010.03.24
申请人 TOKYO ELECTRON LIMITED;AIR PRODUCTS AND CHEMICALS, INC. 发明人 LEE, ERIC, M.;VRTIS, RAYMOND, NICHOLAS;O'NEILL, MARK, LEONARD;HURLEY, PATRICK, TIMOTHY;FAGUET, JACQUES;MATSUMOTO, TAKASHI;AKIYAMA, OSAYUKI
分类号 H01L21/363;C23C16/00;C23C16/18;C23C16/30;C23C16/40;C23C16/455;C23C16/46;C23C16/56 主分类号 H01L21/363
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