A chemical vapor deposition (CVD) method for depositing a thin film on a surface of a substrate is described. The CVD method comprises disposing a substrate on a substrate holder in a process chamber, and introducing a process gas to the process chamber, wherein the process gas comprises a chemical precursor. The process gas is exposed to a non-ionizing heat source separate from the substrate holder to cause decomposition of the chemical precursor. A thin film is deposited upon the substrate.
申请公布号
EP2412011(A4)
申请公布日期
2015.04.29
申请号
EP20100756743
申请日期
2010.03.24
申请人
TOKYO ELECTRON LIMITED;AIR PRODUCTS AND CHEMICALS, INC.