METHOD FOR THE SYNTHESIS OF SIO2 FILMS AT LOW TEMPERATURES BY OZONE-ASSISTED ULTRASONIC SPRAY PYROLYSIS.

摘要

The present invention refers to a process for the synthesis of SiO2 films at low temperatures (300°C to 550°C) using ozone-assisted ultrasonic spray pyrolysis. The present invention also refers to the obtention of SiO2 films of high quality using tetraethyl orthosilicate as a silicon precursor and an ozone flow in parallel for assisting the oxidation process. The purpose of the present invention is to provide a novel technique for obtaining high-quality SiO2 films at low costs.