发明名称 |
pBIST architecture with multiple asynchronous sub chips operating in differing voltage domains |
摘要 |
A programmable Built In Self Test (pBIST) system used to test embedded memories where the memories may be operating at a voltage domain different from the voltage domain of the pBIST. A plurality of buffer and synchronizing registers are used to avoid meta stable conditions caused by the time delays introduced by the voltage shifters required to bridge the various voltage domains. |
申请公布号 |
US9021320(B2) |
申请公布日期 |
2015.04.28 |
申请号 |
US201213709168 |
申请日期 |
2012.12.10 |
申请人 |
Texas Instruments Incorporated |
发明人 |
Damodaran Raguram;Bhoria Naveen;Kokrady Aman |
分类号 |
G11C29/00;G11C29/12;G11C5/14;G11C29/16;G11C29/04 |
主分类号 |
G11C29/00 |
代理机构 |
|
代理人 |
Marshall, Jr. Robert D.;Telecky, Jr. Frederick J. |
主权项 |
1. An embedded memory test system comprising:
a programmable Built In Self Test (pBIST) engine; a plurality of sub chips performing memory testing and data logging functions; and a plurality of asynchronous bridges connecting the pBIST engine to said sub chips, each of said plurality of asynchronous bridges operable to voltage level shift the pBIST output signals to match a voltage domain of an applicable sub chip, each of said plurality of asynchronous bridges including
a plurality of voltage level shifters;a plurality of pointer registers operable to increment on each cycle as indicated by a data valid signal;a plurality of synchronization registers; anda plurality of data buffer register banks. |
地址 |
Dallas TX US |