Semiconductor device and method of manufacturing the same

摘要

A semiconductor device according an aspect of the present disclosure may include an isolation layer formed within a substrate and formed to define an active region, a junction formed in the active region, well regions formed under the isolation layer, and a plug embedded within the substrate between the junction and the well regions and formed extend to a greater depth than the well regions.

主权项

1. A method of manufacturing a semiconductor device, comprising:
forming well regions within a substrate; forming an isolation layer, defining an active region, within the substrate in which the well regions are formed; forming a junction in the active region; and forming a plug embedded within the substrate between the junction and the well regions and formed to extend to a greater depth than the well regions so that the plug compensates a concentration of the well regions and forms a depletion layer barrier between the junction and the well regions, wherein the plug is formed of a conductive layer having a P type.