| 主权项 |
1. A method comprising: forming a gate dielectric on a substrate; forming a trapezoidal gate electrode having a lower surface abutting the gate dielectric, an upper surface, and sloped sidewalls, the upper surface being narrower than the lower surface; using the trapezoidal gate electrode as a mask, implanting dopant ions into the substrate to form source and drain regions; and forming a strain-inducing layer overlying the trapezoidal gate electrode and the source and drain regions, the strain-inducing layer configured to induce strain in a channel region, wherein the trapezoidal gate includes a rectangular extension for use as a contact landing pad, and further comprising forming a metal contact to the trapezoidal gate, the metal contact intersecting the contact landing pad. |
