Method for integrating low-k dielectrics

摘要

A method for treating a dielectric film on a substrate and, in particular, a method for integrating a low-k dielectric film with subsequently formed metal interconnects is described. The method includes preparing a dielectric film on a substrate, wherein the dielectric film is a low-k dielectric film having a dielectric constant less than or equal to a value of about 4. Thereafter, the method further includes performing a preliminary curing process on the dielectric film, forming a pattern in the dielectric film using a lithographic process and an etching process, removing undesired residues from the substrate, and performing a final curing process on the dielectric film, wherein the final curing process includes irradiating the substrate with ultraviolet (UV) radiation.

主权项

1. A method of integrating a dielectric film on a substrate, comprising:
preparing a dielectric film on a substrate, said dielectric film being a low-k dielectric film having a dielectric constant less than or equal to a value of about 4; performing a preliminary curing process on said dielectric film; forming a pattern in said dielectric film using a lithographic process and an etching process; removing undesired residues, occurring as a result of the forming said pattern, from a side wall surface of the pattern in said dielectric film by directly irradiating said undesired residues on the side wall surface of the pattern at least with infrared (IR) radiation; and after said removing step, performing a final curing process on said dielectric film, said final curing process includes irradiating said substrate with at least one of said infrared (IR) radiation and ultraviolet (UV) radiation.