| 发明名称 | Semiconductor light emitting device | ||
| 摘要 | There is provided a semiconductor light emitting device including: an n-type semiconductor layer; a p-type semiconductor layer; and an active layer disposed between the n-type semiconductor layer and the p-type semiconductor layer, and including a plurality of alternately stacked quantum barrier layers and quantum well layers, wherein at least a portion of the plurality of quantum well layers has different thicknesses, wherein a thickness of a first quantum well layer most adjacent to the p-type semiconductor layer is less than a thickness of a second quantum well layer adjacent thereto and greater than a thickness of a third quantum well layer, other than the first and second quantum well layers. | ||
| 申请公布号 | US9018618(B1) | 申请公布日期 | 2015.04.28 |
| 申请号 | US201414526274 | 申请日期 | 2014.10.28 |
| 申请人 | Samsung Electronics Co., Ltd. | 发明人 | Lee Jong Hyun;Park Ki Ho;Yoon Suk Ho;Han Sang Heon;Hyun Jae Sung |
| 分类号 | H01L29/06;H01L33/00;H01L33/06;H01L33/32 | 主分类号 | H01L29/06 |
| 代理机构 | McDermott Will & Emery LLP | 代理人 | McDermott Will & Emery LLP |
| 主权项 | 1. A semiconductor light emitting device comprising: an n-type semiconductor layer; a p-type semiconductor layer; and an active layer disposed between the n-type semiconductor layer and the p-type semiconductor layer, and including a plurality of alternately stacked quantum barrier layers and quantum well layers, wherein at least a portion of the plurality of quantum well layers has different thicknesses, and wherein a thickness of a first quantum well layer most adjacent to the p-type semiconductor layer is less than a thickness of a second quantum well layer adjacent to the first quantum well layer and greater than a thickness of a third quantum well layer, other than the first and second quantum well layers. | ||
| 地址 | Suwon-Si, Gyeonggi-Do KR | ||