发明名称 Switch control circuit, semiconductor device, and radio communication device
摘要 A switch control circuit has level shifters connected to a switch circuit to convert voltage levels of control signals, a negative potential generating circuit connected to the level shifter, to generate a negative potential, a negative potential output line supplying the negative potential to the level shifter, and a negative potential output line control circuit configured to control the potential of the negative potential output line. The negative potential output line control circuit has a power-supply setting circuit, an inverter inverting the output signal from the power-supply setting circuit, a first capacitor connected between an output terminal of the inverter and the negative potential output line, and a negative potential initialization circuit.
申请公布号 US9020448(B2) 申请公布日期 2015.04.28
申请号 US201314140745 申请日期 2013.12.26
申请人 Kabushiki Kaisha Toshiba 发明人 Seshita Toshiki
分类号 H04B1/44;H03K17/687;H03K17/693;H04M1/78;H04B1/02 主分类号 H04B1/44
代理机构 Posz Law Group, PLC 代理人 Posz Law Group, PLC
主权项 1. A semiconductor switch comprising: a first circuit configured to generate a first negative potential; a high-frequency switch part configured to switch a connection state for high-frequency terminals in accordance with the first negative potential; a second circuit configured to generate a first potential in accordance with a power supply potential; a third circuit configured to delay an output of the second circuit; a fourth circuit configured to invert an output of the third circuit; and a first capacitor disposed between an output of the fourth circuit and an output of the first circuit.
地址 Tokyo JP