发明名称 |
Switch control circuit, semiconductor device, and radio communication device |
摘要 |
A switch control circuit has level shifters connected to a switch circuit to convert voltage levels of control signals, a negative potential generating circuit connected to the level shifter, to generate a negative potential, a negative potential output line supplying the negative potential to the level shifter, and a negative potential output line control circuit configured to control the potential of the negative potential output line. The negative potential output line control circuit has a power-supply setting circuit, an inverter inverting the output signal from the power-supply setting circuit, a first capacitor connected between an output terminal of the inverter and the negative potential output line, and a negative potential initialization circuit. |
申请公布号 |
US9020448(B2) |
申请公布日期 |
2015.04.28 |
申请号 |
US201314140745 |
申请日期 |
2013.12.26 |
申请人 |
Kabushiki Kaisha Toshiba |
发明人 |
Seshita Toshiki |
分类号 |
H04B1/44;H03K17/687;H03K17/693;H04M1/78;H04B1/02 |
主分类号 |
H04B1/44 |
代理机构 |
Posz Law Group, PLC |
代理人 |
Posz Law Group, PLC |
主权项 |
1. A semiconductor switch comprising:
a first circuit configured to generate a first negative potential; a high-frequency switch part configured to switch a connection state for high-frequency terminals in accordance with the first negative potential; a second circuit configured to generate a first potential in accordance with a power supply potential; a third circuit configured to delay an output of the second circuit; a fourth circuit configured to invert an output of the third circuit; and a first capacitor disposed between an output of the fourth circuit and an output of the first circuit. |
地址 |
Tokyo JP |