发明名称 Preventing shorting dendritic migration between electrodes
摘要 In a general aspect, an integrated circuit package includes a first electrode and a second electrode on a support substrate. The first electrode and the second electrode are configured to be electrically coupled to a voltage differential. A dendritic migration of a migratory species can develop under the voltage differential and a non-hermetic environment. The dendritic migration is interrupted by a floating electrical barrier mounted onto the support substrate between the first electrode and the second electrode. The electrical barrier includes a dam for preventing the metal migration. The dam has a height approximately equal to or greater than the largest dimension of a single atom of the migratory species. The first electrode and the second electrode can be mounted on the same side of the support substrate, or on two opposite sides of the support substrate.
申请公布号 US9018765(B2) 申请公布日期 2015.04.28
申请号 US201314027370 申请日期 2013.09.16
申请人 STMicroelectronics, Inc. 发明人 Pritiskutch John C.;Hildenbrandt Richard R.
分类号 H01L29/417;H01L23/00 主分类号 H01L29/417
代理机构 Gardere Wynne Sewell LLP 代理人 Gardere Wynne Sewell LLP
主权项 1. An integrated circuit package, comprising: a first electrode and a second electrode on a support substrate made of a non-electrically conductive material, wherein the first electrode and the second electrode are configured to be electrically coupled to a voltage differential; and a floating electrical barrier comprising a dam made of an electrically conductive material mounted to the support substrate and located between the first electrode and the second electrode, the dam configured to prevent metal migration.
地址 Coppell TX US