| 发明名称 | Semiconductor reaction chamber with plasma capabilities | ||
| 摘要 | A processing chamber including a reaction chamber having a processing area, a processing gas inlet in communication with the processing area, a first excited species generation zone in communication with the processing gas inlet and a second exited species generation zone in communication with the processing gas inlet. A method of processing a substrate including the steps of loading a substrate within a processing area, activating a first excited species generation zone to provide a first excited species precursor to the processing area during a first pulse and, activating a second excited species generation zone to provide a second excited species precursor different from the first excited species precursor to the processing area during a second pulse. | ||
| 申请公布号 | US9018111(B2) | 申请公布日期 | 2015.04.28 |
| 申请号 | US201313948055 | 申请日期 | 2013.07.22 |
| 申请人 | ASM IP Holding B.V. | 发明人 | Milligan Robert Brennan;Alokozai Fred |
| 分类号 | H01L21/67;C23C16/455;H01L21/3065;H01L21/02;H01L21/314;H01J37/32 | 主分类号 | H01L21/67 |
| 代理机构 | Snell & Wilmer LLP | 代理人 | Snell & Wilmer LLP |
| 主权项 | 1. A processing chamber comprising: a reaction chamber having a processing area; a processing gas inlet in communication with the processing area; a first excited species generation zone in communication with the processing gas inlet; and, a second excited species generation zone in communication with the processing gas inlet, wherein the first and second excited species generation zones are selectively in communication with each other. | ||
| 地址 | Almere NL | ||