发明名称 |
Injector for forming films respectively on a stack of wafers |
摘要 |
An injector for forming films respectively on a stack of wafers is provided. The injector includes a plurality of hole structures. Every adjacent two of the wafers have therebetween a wafer spacing, and each of the wafers has a working surface. The hole structures respectively correspond to the respective wafer spacings. The working surface and a respective hole structure have therebetween a parallel distance. The parallel distance is larger than a half of the wafer spacing. A wafer processing apparatus and a method for forming films respectively on a stack of wafers are also provided. |
申请公布号 |
US9017763(B2) |
申请公布日期 |
2015.04.28 |
申请号 |
US201213716052 |
申请日期 |
2012.12.14 |
申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Hsieh Wei-Che;Wang Brian;Lee Tze-Liang;Lin Yi-Hung;Lien Hao-Ming;Tsai Shiang-Rung;Huang Tai-Chun |
分类号 |
B05B1/14;H01L21/00 |
主分类号 |
B05B1/14 |
代理机构 |
McDermott Will & Emery LLP |
代理人 |
McDermott Will & Emery LLP |
主权项 |
1. A method for forming films respectively on a stack of wafers, every adjacent two wafers in the stack of wafers having therebetween a respective wafer spacing, each wafer in the stack of wafers having a top working surface and a bottom working surface, the method comprising:
providing an injector having a respective hole, an adjusting device, a respective first wafer having a first top working surface, and a respective second wafer having a second bottom working surface, wherein:
the respective hole has a center and corresponds to the respective wafer spacing,a first axis extends along the first top working surface and a second axis extends from the center of the respective hole and parallel with the first axis, and the first and the second axes have a distance therebetween; adjusting a vertical position of the respective hole by the adjusting device to cause the distance to be larger than one half of the wafer spacing, wherein a ratio of the distance to the wafer spacing is larger than or equal to ¾ and less than 1; and supplying a working material from the respective hole to form the films on the first top working surface and the second bottom working surface. |
地址 |
Hsinchu TW |