Beta voltaic semiconductor photodiode fabricated from a radioisotope

摘要

In one preferred embodiment, a semiconductor photodiode is provided which includes a substrate layer fabricated from a Si32 radioisotope of a first type of conductivity material and a thick-field oxide layer formed on the substrate layer. The oxide layer has a selectively patterned area to form an open region on the substrate layer. The semiconductor photodiode further includes a dopant material of a second conductivity material, which is different from the first conductivity material. The dopant material is formed within the open region on the substrate layer to form a photodiode junction. The semiconductor photodiode further includes an enclosure package enclosing the semiconductor diode for containing any radiation from the radioisotope.

主权项

1. A semiconductor photodiode comprising:
a substrate active depletion layer fabricated from a radioisotope of a first type of conductivity material; a thick-field oxide layer formed on the substrate layer, the oxide layer having an open center region on the substrate layer; and a dopant material of a second conductivity material, different from the first conductivity material, the dopant material formed within the open center region on the substrate layer to form a photodiode junction, including an enclosure package enclosing the semiconductor diode for containing any radiation from the radioisotope such that initial emission of beta particles begins in the active depletion layer and substantially all of the emitted beta particles are contained within the enclosure package during operation.