Semiconductor device and manufacturing method and operating method for the same

摘要

A semiconductor device and a manufacturing method and an operating method for the same are provided. The semiconductor device comprises a substrate, a doped region and a stack structure. The doped region is in the substrate. The stack structure is on the substrate. The stack structure comprises a dielectric layer, an electrode layer, a solid electrolyte layer and an ion supplying layer.

主权项

1. A semiconductor device, comprising:
a substrate; a doped region in the substrate; and a stack structure on the substrate, the stack structure comprising: a dielectric layer; an electrode layer; a solid electrolyte layer; and an ion supplying layer, wherein the electrode layer and the substrate are separated by the dielectric layer.