发明名称 Mechanisms for forming bump structures over wide metal pad
摘要 Embodiments of mechanisms for forming a semiconductor die are provided. The semiconductor die includes a semiconductor substrate and a protection layer formed over the semiconductor substrate. The semiconductor die also includes a conductive layer conformally formed over the protection layer, and a recess is formed in the conductive layer. The recess surrounds a region of the conductive layer. The semiconductor die further includes a solder bump formed over the region of the conductive layer surrounded by the recess.
申请公布号 US9018757(B2) 申请公布日期 2015.04.28
申请号 US201313943256 申请日期 2013.07.16
申请人 Taiwan Semiconductor Manufacturing Co., Ltd. 发明人 Tsai Chung-Hao;Wang Chuei-Tang;Yu Chen-Hua
分类号 H01L23/48;H01L23/498 主分类号 H01L23/48
代理机构 Birch, Stewart, Kolasch & Birch, LLP 代理人 Birch, Stewart, Kolasch & Birch, LLP
主权项 1. A semiconductor die, comprising: a semiconductor substrate; a protection layer formed over the semiconductor substrate; a conductive layer conformally formed over the protection layer, wherein a recess is formed in the conductive layer, and the recess surrounds a region of the conductive layer; and a solder bump formed over the region of the conductive layer surrounded by the recess, wherein the conductive layer is wider than the solder bump.
地址 Hsin-Chu TW