发明名称 |
Mechanisms for forming bump structures over wide metal pad |
摘要 |
Embodiments of mechanisms for forming a semiconductor die are provided. The semiconductor die includes a semiconductor substrate and a protection layer formed over the semiconductor substrate. The semiconductor die also includes a conductive layer conformally formed over the protection layer, and a recess is formed in the conductive layer. The recess surrounds a region of the conductive layer. The semiconductor die further includes a solder bump formed over the region of the conductive layer surrounded by the recess. |
申请公布号 |
US9018757(B2) |
申请公布日期 |
2015.04.28 |
申请号 |
US201313943256 |
申请日期 |
2013.07.16 |
申请人 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
发明人 |
Tsai Chung-Hao;Wang Chuei-Tang;Yu Chen-Hua |
分类号 |
H01L23/48;H01L23/498 |
主分类号 |
H01L23/48 |
代理机构 |
Birch, Stewart, Kolasch & Birch, LLP |
代理人 |
Birch, Stewart, Kolasch & Birch, LLP |
主权项 |
1. A semiconductor die, comprising:
a semiconductor substrate; a protection layer formed over the semiconductor substrate; a conductive layer conformally formed over the protection layer, wherein a recess is formed in the conductive layer, and the recess surrounds a region of the conductive layer; and a solder bump formed over the region of the conductive layer surrounded by the recess, wherein the conductive layer is wider than the solder bump. |
地址 |
Hsin-Chu TW |