| 发明名称 | Thin-film magnetic oscillation element | ||
| 摘要 | A thin-film magnetic oscillation element includes a pinned magnetic layer, a free magnetic layer, a nonmagnetic spacer layer provided between the pinned magnetic layer and the free magnetic layer, and a pair of electrodes, in which the easy axis of magnetization of the pinned magnetic layer lies in an in-plane direction of the plane of the pinned magnetic layer, and the easy axis of magnetization of the free magnetic layer lies in a direction normal to the plane of the free magnetic layer. Preferably, the relationship between the saturation magnetization Ms and the magnetic anisotropy field Ha of the free magnetic layer satisfies 1.257 Ms<Ha<12.57 Ms. More preferably, the free magnetic layer is composed of an alloy or a stacked film containing at least one element selected from Co, Ni, Fe, and B. | ||
| 申请公布号 | US9017831(B2) | 申请公布日期 | 2015.04.28 |
| 申请号 | US201313779048 | 申请日期 | 2013.02.27 |
| 申请人 | TDK Corporation | 发明人 | Nakada Katsuyuki;Suwa Takahiro;Ito Kuniyasu;Kakinuma Yuji;Takahashi Masato |
| 分类号 | G11C11/16;H01F1/00;G01R33/09;H01F10/32;G11B5/39 | 主分类号 | G11C11/16 |
| 代理机构 | Oliff PLC | 代理人 | Oliff PLC |
| 主权项 | 1. A thin-film magnetic oscillation element comprising: a pinned magnetic layer; a free magnetic layer; a nonmagnetic spacer layer provided between the pinned magnetic layer and the free magnetic layer; and a pair of electrodes, wherein an easy axis of magnetization of the pinned magnetic layer is in an in-plane direction of a plane of the pinned magnetic layer, an easy axis of magnetization of the free magnetic layer is in a direction normal to a plane of the free magnetic layer, and a relationship between a saturation magnetization Ms and a magnetic anisotropy field Ha of the free magnetic layer satisfies 1.333Ms≦Ha≦12.628Ms. | ||
| 地址 | Tokyo JP | ||