Semiconductor structure for an electronic interruptor power switch

摘要

The invention relates to a structure comprising an n-type substrate (1) having a bottom surface (10) and a top surface (11), a drain (D) contacting the bottom surface (10) of the substrate (1), a first n-type semiconductor region (2) having a top surface (21) provided with a contact area (210), a source (S) contacting the contact area (210), and a second p-type semiconductor region (3) arranged inside the first semiconductor region (2) and defining first and second conduction channels (C1, C2) between the drain and the source, characterized in that said structure comprises first and second metal gratings (G1, G2), each of which has a portion (40, 71) contacting the first semiconductor region (2) so as to form a Schottky junction.

主权项

1. A semiconducting structure for an electronic power switch, including:
a substrate of a first type of conductivity, having a lower face and an upper face, a drain electrode in contact with the lower face of the substrate, a first semiconducting region, of the first type of conductivity, having a lower surface laid out on the upper face of the substrate and an upper surface provided with a contact area, a source electrode in contact with the contact area of the first semiconducting region, a second semiconducting region, of a second type of conductivity, laid out inside the first semiconducting region, under the contact area, so as to delimit a first and a second conduction channel of the first type of conductivity between the drain electrode and the source electrode, the semiconducting structure being wherein it includes: a first metal gate electrode having at least one first portion in contact with the second semiconducting region, and at least one second portion in contact with the first semiconducting region so as to form a first junction of the Schottky type, and a second metal gate electrode having at least one first portion in contact with the upper surface of the first semiconducting region so as to form a second junction of the Schottky type, the second gate electrode being laid out at a distance from the contact area, wherein the first metal gate electrode is buried and the second metal gate electrode is not buried.