Chemically amplified resist composition and patterning process

摘要

A chemically amplified resist composition comprising a base polymer and an amine quencher in the form of a β-alanine, γ-aminobutyric acid, 5-aminovaleric acid, 6-aminocaproic acid, 7-aminoheptanoic acid. 8-aminooctanoic acid or 9-aminononanoic acid derivative having an unsubstituted carboxyl group has a high contrast of alkaline dissolution in rate before and after exposure and forms a pattern of good profile at a high resolution, minimal roughness and wide DOF.

主权项

1. A chemically amplified resist composition comprising a base polymer and a basic compound of the general formula (1): wherein R1 is hydrogen, or a straight, branched or cyclic C1-C30 alkyl, C6-C30 aryl, C7-C30 aralkyl, C2-C30 alkenyl, C2-C10 alkynyl, or C4-C12 heterocyclic-bearing group, or a combination of such groups, which group may contain a hydroxyl, mercapto, carboxyl, ether, thio ether, ester, sulfonic acid ester, sulfonyl, lactone ring, carbonyl, cyano, nitro, halogen, trifluoromethyl, amide, imide, sulfonamide, carbonate, sulfide, —N═CR—O—, —N═CR—S—, or ═N—O—N═ moiety, or R1 may be an acid labile group; R is hydrogen, mercapto, hydroxyl or C1-C3 alkyl, or may bond with the nitrogen atom in formula (1) to form a ring; R2 and R3 each are hydrogen, a straight or branched C1-C4 alkyl group or C2-C4 alkenyl group, or R2 and R3 may bond together to form a ring; R4 is hydrogen or a straight, branched or cyclic C4-C10 alkyl group to form a primary or secondary ester group, the alkyl group being optionally substituted with fluorine; and m is an integer of 2 to 8.