One-time programmable memory cell, memory and manufacturing method thereof

摘要

The present invention pertains to the technical field of one-time programmable memory (OTP), and in particular to a one-time programmable memory unit, OTP, and method of fabricating the same. The OTP unit comprises a lower electrode, an upper electrode and a storage medium layer placed between the upper electrode and the lower electrode, the storage medium layer comprises a first metal oxide layer and a second metal oxide layer, wherein an adjoining area for programming is formed between the first metal oxide layer and the second metal oxide layer. The OTP comprises a plurality of the above-described one-time programmable memory units arranged in rows and columns. The OTP unit and the OTP have such characteristics as low programming voltage, small unit area, being able to integrate into a back-end structure of integrated circuit, great process flexibility, and the method of fabricating the OTP unit and the OTP is relatively simple and low in cost.

主权项

1. A one-time programmable memory unit, comprising a lower electrode, an upper electrode and a storage medium layer placed between the upper electrode and the lower electrode, characterized in that the storage medium layer comprises:
a first metal oxide layer which is formed by oxidizing a first metal layer or a first metal compound layer; and a second metal oxide layer which is formed by oxidizing a second metal layer or a second metal compound layer; wherein the first metal layer or the first metal compound layer and the second metal layer or the second metal compound layer are substantially located in the same layer and adjoin with each other, and the lower electrode is composed of the first metal oxide layer or the first metal compound layer and the second metal oxide layer or the second metal compound layer; an adjoining area for programming is formed between the first metal oxide layer and the second metal oxide layer.