Thin film transistor including silicon nitride layer and manufacturing method thereof

摘要

A thin film transistor in which deterioration at initial operation is not likely to be caused and a manufacturing method thereof. A transistor which includes a gate insulating layer at least whose uppermost surface is a silicon nitride layer, a semiconductor layer over the gate insulating layer, and a buffer layer over the semiconductor layer and in which the concentration of nitrogen in the vicinity of an interface between the semiconductor layer and the gate insulating layer, which is in the semiconductor layer is lower than that of the buffer layer and other parts of the semiconductor layer. Such a thin film transistor can be manufactured by exposing the gate insulating layer to an air atmosphere and performing plasma treatment on the gate insulating layer before the semiconductor layer is formed.

主权项

1. A method for manufacturing a thin film transistor comprising:
forming a silicon nitride layer; exposing the silicon nitride layer to an air atmosphere; performing plasma treatment on the silicon nitride layer by using argon gas plasma; and after performing the plasma treatment, forming a semiconductor layer including crystal grains over the silicon nitride layer, wherein the silicon nitride layer is formed in a first chamber of a multi-chamber, wherein the semiconductor layer is formed in a second chamber of the multi-chamber, and wherein the first chamber and the second chamber can be connected with each other in a vacuum state.