Semiconductor device having a metal gate and fabricating method thereof

摘要

The present invention provides a method of forming a semiconductor device having a metal gate. A substrate is provided and a gate dielectric and a work function metal layer are formed thereon, wherein the work function metal layer is on the gate dielectric layer. Then, a top barrier layer is formed on the work function metal layer. The step of forming the top barrier layer includes increasing a concentration of a boundary protection material in the top barrier layer. Lastly, a metal layer is formed on the top barrier layer. The present invention further provides a semiconductor device having a metal gate.

主权项

1. A method of fabricating a semiconductor device having a metal gate, comprising:
providing a substrate; forming a gate dielectric layer and a work function metal layer on the substrate wherein the work function metal layer is disposed on the gate dielectric layer; forming a top barrier layer on the work function metal layer comprising importing a boundary protection material comprising oxygen into the whole top barrier layer, wherein a concentration of the boundary protection material in the whole top barrier layer is increased simultaneously in the step of forming the top barrier layer; and forming a metal layer on the top barrier layer.