Method of fabricating gallium nitride-based semiconductor device

摘要

A method of fabricating a gallium nitride (GaN)-based semiconductor device. The method includes preparing a GaN substrate having lower and upper surfaces; growing GaN-based semiconductor layers on the upper surface of the GaN substrate to form a semiconductor stack; forming a support substrate on the semiconductor stack; and separating the GaN substrate from the semiconductor stack. The separating of the GaN substrate includes irradiating a laser from the lower surface of the GaN substrate. The laser is transmitted through the lower surface of the GaN substrate and forms a laser absorption region inside a structure consisting of the GaN substrate and the semiconductor stack.

主权项

1. A method of fabricating a gallium nitride (GaN)-based semiconductor device, the method comprising:
growing GaN-based semiconductor layers on an upper surface of a GaN substrate to form a semiconductor stack; forming a support substrate on the semiconductor stack; scanning a laser across a lower surface of the GaN substrate, the laser emitting a laser beam that is focused at focusing positions, such that the focusing positions form a laser absorption region inside a structure comprising the GaN substrate and the semiconductor stack; and separating the GaN substrate from the semiconductor stack to form the GaN semiconductor device.