发明名称 Semiconductor device and a method of manufacturing the same
摘要 A semiconductor device is manufactured by forming at least one epitaxial structure over a substrate. A portion of the substrate is cut and lifted to expose a partial surface of the epitaxial structure. A first electrode is then formed on the exposed partial surface to result in a vertical semiconductor device.
申请公布号 US9018025(B2) 申请公布日期 2015.04.28
申请号 US201414217953 申请日期 2014.03.18
申请人 Phostek Inc. 发明人 Chang Yuan-Hsiao
分类号 H01L21/02;H01L33/02;H01L33/20;H01L33/38;H01L33/00;H01L31/18;H01L31/0224;H01L31/05;H01L31/055;H01L31/0475 主分类号 H01L21/02
代理机构 WPAT, PC 代理人 WPAT, PC ;King Justin
主权项 1. A semiconductor method of manufacturing a semiconductor device, comprising: providing a substrate; forming at least one epitaxial structure over the substrate; removing a portion of the substrate to expose a partial surface of the epitaxial structure; and forming a first electrode on the exposed partial surface.
地址 Grand Cayman KY