发明名称 |
Semiconductor device and a method of manufacturing the same |
摘要 |
A semiconductor device is manufactured by forming at least one epitaxial structure over a substrate. A portion of the substrate is cut and lifted to expose a partial surface of the epitaxial structure. A first electrode is then formed on the exposed partial surface to result in a vertical semiconductor device. |
申请公布号 |
US9018025(B2) |
申请公布日期 |
2015.04.28 |
申请号 |
US201414217953 |
申请日期 |
2014.03.18 |
申请人 |
Phostek Inc. |
发明人 |
Chang Yuan-Hsiao |
分类号 |
H01L21/02;H01L33/02;H01L33/20;H01L33/38;H01L33/00;H01L31/18;H01L31/0224;H01L31/05;H01L31/055;H01L31/0475 |
主分类号 |
H01L21/02 |
代理机构 |
WPAT, PC |
代理人 |
WPAT, PC ;King Justin |
主权项 |
1. A semiconductor method of manufacturing a semiconductor device, comprising:
providing a substrate; forming at least one epitaxial structure over the substrate; removing a portion of the substrate to expose a partial surface of the epitaxial structure; and forming a first electrode on the exposed partial surface. |
地址 |
Grand Cayman KY |