Drift management in a phase change memory and switch (PCMS) memory device

摘要

The present disclosure relates to the drift management for a memory device. In at least one embodiment, the memory device of the present disclosure may include a phase change memory and switch (hereinafter “PCMS”) memory cell and a memory controller that is capable of implementing drift management to control drift. Other embodiments are described and claimed.

主权项

1. A drift management method comprising:
storing a time when a first memory state is written into a first memory bit in a first memory block of a memory device, the memory device having two or more memory blocks; before writing a second memory state into a memory bit in the first memory block after a time lapse since the first memory state is written, comparing the time lapse with a preset time; and writing the second memory state into a memory bit in a memory block different from the first memory block if the time lapse is equal to or greater than the preset time.