Semiconductor device

摘要

A semiconductor device of the present invention includes a circuit board having a number of electrode portions on the front side and the underside, an electronic circuit element such as a semiconductor chip bonded to the electrode portions on the front side of the circuit board and composing an electronic circuit; and a plurality of ball electrodes for external connection, the ball electrodes being formed on the electrode portions on the underside of the circuit board. Of the electrode portions on the underside of the circuit board, an electrode portion on the outer periphery is formed larger than an electrode portion on the inner periphery. The plurality of ball electrodes are solder balls heated and melted on the electrode portions on the underside of the board so as to form an alloy on the interfaces, the solder balls containing tin and silver but not containing lead.

主权项

1. A semiconductor device, comprising:
a circuit board having a first surface and a second surface opposite to the first surface; an electronic circuit element bonded to the first surface of the circuit board; a resin in contact with a side surface and an upper surface of the electronic circuit element; a plurality of electrodes disposed on the second surface, the plurality of electrodes including:
a first electrode;a plurality of second electrodes disposed to be overlapping with the resin in a thickness direction; and a plurality of solder balls for external connection, wherein the plurality of solder balls includes first, second, third and fourth solder balls, the first solder ball connected to the first electrode and disposed not to overlap with the resin in the thickness direction, and the second solder ball connected to one of the plurality of second electrodes that is nearest to the first electrode, wherein distances between neighboring ones of the first, second, third and fourth solder balls are substantially equal, wherein on the first surface of the circuit board and overlapping with the first solder ball in the thickness direction, no metal layer connects with the electronic circuit element by a bonding member, wherein the first electrode is larger than the one of the second electrodes in cross-sectional view.