Silicon layer transfer substrate and method of manufacturing semiconductor substrate

摘要

A silicon layer transfer substrate includes a silicon substrate of a first substrate, a sacrificial layer, and a transfer silicon layer transferred to a second substrate, wherein the sacrificial layer has a silicon compound layer containing a compound of silicon and at least one element selected from a group consisting of germanium and carbon, and is provided on the silicon substrate of the first substrate, the silicon compound layer having a thickness equal to or smaller than a critical film thickness, the transfer silicon layer transferred to the second substrate is provided on the sacrificial layer, and at least either the silicon substrate or the silicon layer has a groove or a hole connected to the sacrificial layer.

主权项

1. A silicon layer transfer substrate comprising:
a first substrate that is a silicon substrate; a sacrificial layer provided on the first substrate; a transfer silicon layer provided on the sacrificial layer, the transfer silicon layer configured to be transferred to a second substrate; and a groove or a hole formed in the silicon layer transfer substrate that extends in a thickness direction through the transfer silicon layer and through only a portion of the sacrificial layer, but not extending to the first substrate,
wherein the sacrificial layer has a silicon compound layer containing a compound of silicon and at least one element selected from the group consisting of germanium and carbon, the silicon compound layer having a thickness equal to or smaller than a critical film thickness.