| 发明名称 | Adjustable avalanche diode in an integrated circuit | ||
| 摘要 | An avalance diode including, between two heavily-doped regions of opposite conductivity types arranged at the surface of a semiconductor region, a lightly-doped region, with length L of the lightly-doped region between the heavily-doped regions approximately ranging between 50 and 200 nm. | ||
| 申请公布号 | US9018729(B2) | 申请公布日期 | 2015.04.28 |
| 申请号 | US201313895715 | 申请日期 | 2013.05.16 |
| 申请人 | STMicroelectronics (Crolles 2) SAS;STMicroelectronics SA | 发明人 | Bianchi Raul Andres;Fonteneau Pascal |
| 分类号 | H01L23/58;H01L31/0256;H01L27/144;H01L31/18;H01L29/66;H01L29/866;H01L29/06 | 主分类号 | H01L23/58 |
| 代理机构 | Allen, Dyer, Doppelt, Milbrath & Gilchrist, P.A. | 代理人 | Allen, Dyer, Doppelt, Milbrath & Gilchrist, P.A. |
| 主权项 | 1. An avalanche diode comprising: two heavily-doped regions of opposite conductivity types arranged at the surface of a semiconductor region; and a lightly-doped region, with length L of the lightly-doped region between the heavily-doped regions ranging between 120 and 200 nm, said lightly-doped region not being covered by a gate, wherein the lightly-doped region has a doping level ranging between 1017 and 1018 atoms/cm3, and the reverse-mode current leakage up to the avalanche threshold occurs between 4.0 to 7.5 volts. | ||
| 地址 | Crolles FR | ||