Semiconductor device and method for fabricating the same

摘要

A method for fabricating a semiconductor device includes forming a magnetic tunnel junction (MTJ) element on a substrate, forming a first capping layer along the shape of the MTJ element, forming an insulating layer on the first capping layer, forming a trench exposing a portion of the first capping layer above the MTJ element by selectively etching the insulating layer, forming a second capping layer on sidewalls of the trench, removing the exposed portion of the first capping layer using the second capping layer as an etching mask to expose an upper surface of the MTJ element, and forming a conductive layer in the trench, wherein the conductive layer contacts the upper surface of the MTJ element.

主权项

1. A method for fabricating a semiconductor device, comprising:
forming a magnetic tunnel junction (MTJ) element on a substrate; forming a hard mask pattern on the MTJ element; forming a first capping layer along the shape of the MTJ element and the hard mask pattern; forming a first insulating layer on the first capping layer; removing a portion of the first capping layer and a portion of the first insulating layer to expose a portion of the hard mask pattern arranged on the MTJ element; forming an upper conductive layer on the exposed hard mask; forming a second insulating layer on the upper conductive layer; selectively removing the second insulating layer to form a trench exposing a portion of the upper conductive layer; and forming a contact plug in the trench to contact the upper conductive layer.